標題: High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization
作者: Su, CJ
Lin, HC
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: metal-induced lateral crystallization (MILC);nanowires (NWs);thin-film transistors (TFTs)
公開日期: 1-七月-2006
摘要: Thin-film transistors with poly-Si nanowire (NW) channels enhanced by metal-induced lateral crystallization (MILC) are reported. The new device features a side-gate with self-aligned NW channels abutting the sidewalls of the gate structure. By adopting the MILC technique, the crystallinity of the NW channels is greatly enhanced, compared to those formed by solid-phase crystallization. As a result, the electrical performance of the devices could be significantly enhanced in terms of reduced subthreshold swing and threshold voltage as well as improved field-effect mobility.
URI: http://dx.doi.org/10.1109/LED.2006.877708
http://hdl.handle.net/11536/12075
ISSN: 0741-3106
DOI: 10.1109/LED.2006.877708
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 27
Issue: 7
起始頁: 582
結束頁: 584
顯示於類別:期刊論文


文件中的檔案:

  1. 000238712200018.pdf