標題: Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method
作者: Chen, JF
Chen, NC
Huang, WY
Lee, WI
Feng, MS
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: GaN;deep level;transient capacitance;OMVPE
公開日期: 1-七月-1996
摘要: The transient capacitance method nas used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27 eV were observed in the TMGa sample, while a deep level at 0.60 eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.
URI: http://dx.doi.org/10.1143/JJAP.35.L810
http://hdl.handle.net/11536/1207
ISSN: 0021-4922
DOI: 10.1143/JJAP.35.L810
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 35
Issue: 7A
起始頁: L810
結束頁: L812
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UW82400003.pdf