標題: A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects
作者: Chen, Bae-Horng
Wei, Jeng-Hua
Lo, Po-Yuan
Wang, Hung-Hsiang
Lai, Ming-Jinn
Tsai, Ming-Jinn
Chao, Tien Sheng
Lin, Horng-Chih
Huang, Tiao-Yuan
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: carbon nanotube field effect transistor (CNT-FET);double-gate CNT-FET;modulate;n- or p-type;ambipolar CNT-FETs
公開日期: 1-Jul-2006
摘要: In this paper, we report a conduction-type-tunable carbon nanotube field effect transistor (CNT-FET) with double-gate structure (DG CNT-FET). In this study, a specially designed narrow top-gate is created to modulate the energy band in the middle region of a single CNT. In the proposed DG device structure, the top-gate and bottom-gate biases exhibit independent modulation behaviors. Depending on whether a positive or negative bias is applied to the top-gate, the CNT-FET can be operated in either n- or p-type conduction. Energy band diagram conducive to the physical mechanisms of the proposed DG CNT-FET device structure is proposed. Based on the proposed hypothesis, ambipolar CNT-FETs can indeed be converted to n- or p-type-like behaviors. (c) 2006 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2006.05.026
http://hdl.handle.net/11536/12053
ISSN: 0038-1101
DOI: 10.1016/j.sse.2006.05.026
期刊: SOLID-STATE ELECTRONICS
Volume: 50
Issue: 7-8
起始頁: 1341
結束頁: 1348
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