標題: Nitridization of the stacked poly-Si gate to suppress the boron penetration in pMOS
作者: Lin, YH
Lai, CS
Lee, CL
Lei, TF
Chao, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-1996
摘要: NH3-nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate for pMOS application is proposed and demonstrated. Due to the blocking of fluorine diffusion in the poly-Si gate by the nitrogen-rich layers, the amount of fluorine in the gate oxide, consequently, the fluorine enhancement on boron penetration is reduced. The negative effects of the NH3-nitridized oxide were not found in this work. Moreover, this nitridized stacked poly-Si gate improves significantly the electrical characteristics of the gate oxide as a result of the indirect and slight nitridation at the gate oxide.
URI: http://dx.doi.org/10.1109/16.502428
http://hdl.handle.net/11536/1205
ISSN: 0018-9383
DOI: 10.1109/16.502428
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 43
Issue: 7
起始頁: 1161
結束頁: 1165
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UU61900017.pdf