標題: Thermochemical reaction of ZrOx(N-y) interfaces on Ge and Si substrates
作者: Cheng, Chao-Ching
Chien, Chao-Hsin
Lin, Je-Hung
Chang, Chun-Yen
Luo, Guang-Li
Yang, Chun-Hui
Hsu, Shih-Lu
電子工程學系及電子研究所
奈米中心
Department of Electronics Engineering and Institute of Electronics
Nano Facility Center
公開日期: 3-Jul-2006
摘要: We have studied the thermochemical characteristics of ZrOx(N-y)/Ge and Si interfaces by employing postdeposition annealing. We found that Ge oxide species severely desorbed from the inherent interfacial layer, which was speculated to retard the formation of Zr germanate during high-temperature processing. These unique features enable ZrOx(N-y)/Ge gate stack to show a better equivalent-oxide-thickness scalability as compared to ZrOx(N-y)/Si gate stack. However, the volatilization of GeOx-contained interfacial layer also caused the formation of small pits and/or holes in the overlying ZrOx(N-y) gate dielectrics, which was expected to cause deterioration in the electrical properties of fabricated high-k/Ge devices. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2219347
http://hdl.handle.net/11536/12040
ISSN: 0003-6951
DOI: 10.1063/1.2219347
期刊: APPLIED PHYSICS LETTERS
Volume: 89
Issue: 1
結束頁: 
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