標題: Strain enhanced DC-RF performance of 0.13 mu m nMOSFETs on flexible plastic substrate
作者: Chin, A.
Kao, H. L.
Kao, C. H.
Liao, C. C.
Tseng, Y. Y.
Chi, C. C.
奈米科技中心
Center for Nanoscience and Technology
公開日期: 6-七月-2006
摘要: A 14.3% saturation current I-d,(sat) improvement and 0.75 dB minimum noise figure (NFmin) at 10 GHz were measured by applying similar to 0.7% tensile strain for 16 finger, 0.13 mu m RF MOSFETs with thin-body (40 mu m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90 nm strained-Si nMOSFETs and consistent with device simulations.
URI: http://dx.doi.org/10.1049/el:20061035
http://hdl.handle.net/11536/12037
ISSN: 0013-5194
DOI: 10.1049/el:20061035
期刊: ELECTRONICS LETTERS
Volume: 42
Issue: 14
起始頁: 827
結束頁: 829
顯示於類別:期刊論文


文件中的檔案:

  1. 000239467500030.pdf