標題: Surface KOH treatment in AlGaN-based photodiodes
作者: Lan, W. -H.
Huang, K. -C.
Huang, K. F.
電子物理學系
Department of Electrophysics
公開日期: 6-七月-2006
摘要: KOH treatment is investigated as a method to improve the IN characteristics of AIGaN-based photodiodes. The defects in the photodiode may enhance the dark current, and cause some photocurrents with incident photon energy less than the absorption edge. With the KOH treatment in the process, the defects and whisker-like features could be reduced. High rejection ratio in the spectral responsivity could be achieved. The KOH treatment is a good method to reduce the surface defects in AlGaN-based photodiodes.
URI: http://dx.doi.org/10.1049/el:20061088
http://hdl.handle.net/11536/12036
ISSN: 0013-5194
DOI: 10.1049/el:20061088
期刊: ELECTRONICS LETTERS
Volume: 42
Issue: 14
起始頁: 821
結束頁: 822
顯示於類別:期刊論文


文件中的檔案:

  1. 000239467500026.pdf