標題: Ultrafast carrier capture in charged InAs quantum dots
作者: Sun, K. W.
Kechiantz, A.
應用化學系
應用化學系分子科學碩博班
Department of Applied Chemistry
Institute of Molecular science
關鍵字: laser-matter interactions;optical spectroscopy;quantum wells;wires and dots;luminescence;ultrafast processes and measurements;upconversion;time resolved measurements
公開日期: 15-Jul-2006
摘要: We report theoretical and experimental results of our investigation on carrier capture and relaxation processes in undoped and modulation-doped InAs/GaAs self-assembled quantum dots (QDs). We find that carrier capture and relaxation in the ground state is faster in the modulation-doped quantum dots compared to the case in neutral dots at an excitation level as low as one electron-hole pair per dot. The ultrafast photoluminescence (PL) transient rise time observed in the charged dots is attributed to the relaxing of strained field induced by the presence of cold carriers in the dots. The Hamiltonian of electron's interaction with local vibrating field and carrier capture time are also calculated. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jnoncrysol.2006.03.015
http://hdl.handle.net/11536/12022
ISSN: 0022-3093
DOI: 10.1016/j.jnoncrysol.2006.03.015
期刊: JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume: 352
Issue: 23-25
起始頁: 2355
結束頁: 2359
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000239110200016.pdf