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dc.contributor.authorHuang, Tai-Hsiangen_US
dc.contributor.authorWhang, Wha-Tzongen_US
dc.contributor.authorShen, Jiun Yien_US
dc.contributor.authorWen, Yuh-Shengen_US
dc.contributor.authorLin, Jiann T.en_US
dc.contributor.authorKe, Tung-Hueien_US
dc.contributor.authorChen, Li-Yinen_US
dc.contributor.authorWu, Chung-Chihen_US
dc.date.accessioned2014-12-08T15:16:11Z-
dc.date.available2014-12-08T15:16:11Z-
dc.date.issued2006-07-21en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/adfm.200500823en_US
dc.identifier.urihttp://hdl.handle.net/11536/12018-
dc.description.abstractA series of 2,8-disubstituted dibenzothiophene and 2,8-disubstituted dibenzothiophene-SS-dioxide derivatives containing quinoxaline and pyrazine moieties are synthesized via three key steps: i) palladium-catalyzed Sonogashira coupling reaction to form dialkynes; ii) conversion of the dialkynes to diones; and iii) condensation of the diones with diamines. Single-crystal characterization of 2,8-di(6,7-dimethyl-3-phenyl-2-quinoxalinyl)-5H-5 lambda(6)-dibenzo[b,d]thiophene-5,5-dione indicates a triclinic crystal structure with space group P1 and a non-coplanar structure. These new materials are amorphous, with glass-transition temperatures ranging from 132 to 194 degrees C. The compounds (Cpd) exhibit high electron mobilities and serve as effective electron-transport materials for organic light-emitting devices. Double-layer devices are fabricated with the structure indium tin oxide (ITO)/Qn/Cpd/LiF/Al, where yellow-emitting 2,3-bis[4-(N-phenyl-9-ethyl-3-carbazolylamino)phenyl]quinoxaline (Qn) serves as the emitting layer. An external quantum efficiency of 1.41 %, a power efficiency of 4.94 lm W-1, and a current efficiency of 1.62 cd A(-1) are achieved at a current density of 100 mA cm(-2).en_US
dc.language.isoen_USen_US
dc.titleDibenzothiophene/oxide and quinoxaline/pyrazine derivatives serving as electron-transport materialsen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adfm.200500823en_US
dc.identifier.journalADVANCED FUNCTIONAL MATERIALSen_US
dc.citation.volume16en_US
dc.citation.issue11en_US
dc.citation.spage1449en_US
dc.citation.epage1456en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000239543000008-
dc.citation.woscount33-
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