Title: Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength
Authors: Shi, Jin-Wei
Li, Yu-Tai
Pan, Ci-Ling
Lin, M. L.
Wu, Y. S.
Liu, W. S.
Chyi, J. -I.
光電工程學系
Department of Photonics
Issue Date: 31-Jul-2006
Abstract: In this letter, the authors introduce a GaAs/AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830 nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. According to their microwave and optical-to-electrical measurement results, such distinct phenomena can occur under a much lower current density (0.3 mA/mu m(2) vs 0.05 mA/mu m(2)) than previously reported for InP-InGaAs UTC-PDs. This can be attributed to the self-induced field in the absorption region, made possible due to the optimized p-type doping profile. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2267088
http://hdl.handle.net/11536/12004
ISSN: 0003-6951
DOI: 10.1063/1.2267088
Journal: APPLIED PHYSICS LETTERS
Volume: 89
Issue: 5
End Page: 
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