|Title:||Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength|
Lin, M. L.
Wu, Y. S.
Liu, W. S.
Chyi, J. -I.
Department of Photonics
|Abstract:||In this letter, the authors introduce a GaAs/AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830 nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. According to their microwave and optical-to-electrical measurement results, such distinct phenomena can occur under a much lower current density (0.3 mA/mu m(2) vs 0.05 mA/mu m(2)) than previously reported for InP-InGaAs UTC-PDs. This can be attributed to the self-induced field in the absorption region, made possible due to the optimized p-type doping profile. (c) 2006 American Institute of Physics.|
|Journal:||APPLIED PHYSICS LETTERS|
|Appears in Collections:||Articles|
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