標題: Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer
作者: Tu, Chun-Hao
Chang, Ting-Chang
Liu, Po-Tsun
Liu, Hsin-Chou
Tsai, Chia-Chou
Chang, Li-Ting
Tseng, Tseung-Yuan
Sze, Simon M.
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 31-Jul-2006
摘要: The formation of germanium nanocrystals embedded in silicon-oxygen nitride with distributed charge storage elements is proposed in this work. A large memory window is observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after high temperature oxidized SiGeN layer. The nonvolatile memory with the Ge nanocrystals embedded in SiON stack layer exhibits 4 V threshold voltage shift under 10 V write operation. Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2227059
http://hdl.handle.net/11536/12002
ISSN: 0003-6951
DOI: 10.1063/1.2227059
期刊: APPLIED PHYSICS LETTERS
Volume: 89
Issue: 5
結束頁: 
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