標題: Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O
作者: Sun, SC
Chen, TF
電子工程學系及電子研究所
奈米中心
Department of Electronics Engineering and Institute of Electronics
Nano Facility Center
公開日期: 1-七月-1996
摘要: This study aims to improve the electrical characteristics and reliability of low-pressure chemical vapor deposited (LPCVD) Ta2O5 films by developing a new postdeposition single-step annealing technique. Experimental results indicate that excited oxygen atoms generated by N2O decomposition can effectively repair the oxygen vacancies in the as-deposited CVD Ta2O5 film, thereby resulting in a remarkable reduction of the film's leakage current. Two other post-deposition annealing conditions are compared: rapid thermal O-2 annealing and furnace dry-O-2 annealing. The comparison reveals that RTN(2)O annealing has the lowest leakage current, superior thermal stability of electrical characteristics and the best time-dependent dielectric breakdown (TDDB) reliability.
URI: http://dx.doi.org/10.1109/55.506365
http://hdl.handle.net/11536/1200
ISSN: 0741-3106
DOI: 10.1109/55.506365
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 17
Issue: 7
起始頁: 355
結束頁: 357
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UV31900012.pdf