Title: Enhancing luminescence efficiency of InAs quantum dots at 1.5 mu m using a carrier blocking layer
Authors: Hsieh, Tung-Po
Chiu, Pei-Chin
Chyi, Jen-Inn
Chang, Hsiang-Szu
Chen, Wen-Yen
Hsu, Tzu Min
Chang, Wen-Hao
Department of Electrophysics
Issue Date: 31-Jul-2006
Abstract: The authors report an effective way to enhance the optical efficiency of InAs quantum dots (QDs) on GaAs emitting at the wavelength of 1.5 mu m. It is found that the loss of holes from QDs to their proximity via the high indium composition InGaAs overgrown layer, which is necessary for achieving long wavelength emission, is the origin of photoluminescence intensity degradation at high temperature. Inserting a 4 nm thick Al0.45Ga0.55As layer, acting as a carrier blocking layer, into the GaAs capping matrix can improve the room temperature photoluminescence peak intensity by five and two times for the ground and first excited states, respectively.
URI: http://dx.doi.org/10.1063/1.2245374
ISSN: 0003-6951
DOI: 10.1063/1.2245374
Volume: 89
Issue: 5
End Page: 
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