標題: Low-K/Cu CMOS-based SoC technology with 115-GHz f(T), 100-GHz f(max), noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductor
作者: Guo, Jyh-Chyurn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: f(max);f(T);inductor;MiM capacitor;NFmin;RF CMOS;varactor
公開日期: 1-Aug-2006
摘要: Logic CMOS-based RF technology is introduced for a 10-Gb transceiver in which active and passive RF devices have been realized in a single chip. RF nMOS of 115-GHz f(T), 100-GHz f(max), and sub-1.0-dB NFmin at 10 GHz have been fabricated by aggressive device scaling and layout optimization. High-Q MiM capacitor and spiral Cu inductors have been successfully implemented in the same chip by 0.13-mu m low-K/Cu back end of integration line technology. Core 1.0 V MOS and/or junction varactors for VCO at 10 GHz are offerings free of extra cost and realized by the elaborated layout.
URI: http://dx.doi.org/10.1109/TSM.2006.879415
http://hdl.handle.net/11536/11994
ISSN: 0894-6507
DOI: 10.1109/TSM.2006.879415
期刊: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume: 19
Issue: 3
起始頁: 331
結束頁: 338
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