標題: Reproducing subthreshold characteristics of metal-oxide-semiconductor field effect transistors under shallow trench isolation mechanical stress using a stress-dependent diffusion model
作者: Sheu, Yi-Ming
Yang, Sheng-Jier
Wang, Chih-Chiang
Chang, Chih-Sheng
Chen, Ming-Jer
Liu, Sally
Diaz, Carlos H.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: dopant diffusion;mechanical stress;strain;shallow trench isolation;MOSFET;modeling;simulation
公開日期: 1-八月-2006
摘要: N-channel metal-oxide-semiconductor field effect transistors (MOSFETs) with a lightly doped well exhibit subthreshold current versus voltage (I-V) characteristics that are sensitive to shallow trench isolation (STI) mechanical stress. Such striking dependencies offer the opportunity to validate a proposed two-dimensional (2D) process model that relates the impurity diffusion to the mechanical stress throughout the substrate. With the assistance of sophisticated process/device simulations, the model appears to satisfactorily reproduce subthreshold I-V characteristics for different active area lengths and different substrate biases. The stress-dependent point defect equilibrium concentration and diffusion model are also implemented to evaluate the stress effect on transient enhanced diffusion.
URI: http://dx.doi.org/10.1143/JJAP.45.L849
http://hdl.handle.net/11536/11991
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.L849
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 45
Issue: 29-32
起始頁: L849
結束頁: L851
顯示於類別:期刊論文


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  1. 000240294900032.pdf