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dc.contributor.authorChin, Alberten_US
dc.contributor.authorChen, C.en_US
dc.contributor.authorYu, D. S.en_US
dc.contributor.authorKao, H. L.en_US
dc.contributor.authorMcAlister, S. P.en_US
dc.contributor.authorChi, C. C.en_US
dc.date.accessioned2014-12-08T15:16:09Z-
dc.date.available2014-12-08T15:16:09Z-
dc.date.issued2006-08-01en_US
dc.identifier.issn1369-8001en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mssp.2006.08.066en_US
dc.identifier.urihttp://hdl.handle.net/11536/11984-
dc.description.abstractHigh mobility channel materials such as Ge and compound semiconductors (CS) show promise for future generation MOSFETs. The challenge is to integrate these materials with a Si substrate and create good interfaces in the devices. Here we show dislocation-free CSOI and Ge-on-insulator (GOI) devices with good characteristics. The InAlAs/InGaAs/InAlAs-OI on Si MESFETs shows a mobility of 8100 cm(2)/V s. To reduce the leakage current an Al2O3/InGaAs MOSFET was fabricated. Good 451 cm(2)/V S mobility was obtained, higher than the 340 cm(2)/V S of GOI MOSFETs. However the marginally better mobility than GOI and 18X lower mobility than MESFETs indicate that the soft phonon scattering, high-kappa interface scattering and process variations are challenges for CS MOSFETs. In contrast, the GOI CMOS provides a simpler process and significantly higher electron and hole mobilities than its Si counterparts. (C) 2006 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectcompound semiconductor FETsen_US
dc.subjectgermanium-on-insulatoren_US
dc.subjectInGaAs MOSFETen_US
dc.titleComparison of InGaAs MOSFETs with germanium-on-insulator CMOSen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.mssp.2006.08.066en_US
dc.identifier.journalMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSINGen_US
dc.citation.volume9en_US
dc.citation.issue4-5en_US
dc.citation.spage711en_US
dc.citation.epage715en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000243574100054-
Appears in Collections:Conferences Paper


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