|標題:||Comparison of InGaAs MOSFETs with germanium-on-insulator CMOS|
Yu, D. S.
Kao, H. L.
McAlister, S. P.
Chi, C. C.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||compound semiconductor FETs;germanium-on-insulator;InGaAs MOSFET|
|摘要:||High mobility channel materials such as Ge and compound semiconductors (CS) show promise for future generation MOSFETs. The challenge is to integrate these materials with a Si substrate and create good interfaces in the devices. Here we show dislocation-free CSOI and Ge-on-insulator (GOI) devices with good characteristics. The InAlAs/InGaAs/InAlAs-OI on Si MESFETs shows a mobility of 8100 cm(2)/V s. To reduce the leakage current an Al2O3/InGaAs MOSFET was fabricated. Good 451 cm(2)/V S mobility was obtained, higher than the 340 cm(2)/V S of GOI MOSFETs. However the marginally better mobility than GOI and 18X lower mobility than MESFETs indicate that the soft phonon scattering, high-kappa interface scattering and process variations are challenges for CS MOSFETs. In contrast, the GOI CMOS provides a simpler process and significantly higher electron and hole mobilities than its Si counterparts. (C) 2006 Elsevier Ltd. All rights reserved.|
|期刊:||MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING|
|Appears in Collections:||Conferences Paper|
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