標題: Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AIGaN/GaN heterostructures
作者: Desmaris, Vincent
Shiu, Jin-Yu
Lu, Chung-Yu
Rorsman, Niklas
Zirath, Herbert
Chang, Edward-Yi
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Aug-2006
摘要: The microstructure of Si/Ti/Al/Ni/Au was investigated using transmission electron microscopy and energy dispersive x-ray spectroscopy. The dependence of the contact resistance on the silicon layer thickness and the temperature was correlated to the microstructure of the alloyed contacts. The enhancement of the contact resistance by inserting a 30 angstrom thick Si layer under the Ti/Al/Ni/Au metallization was attributed to diffusion of the contact into the AlGaN layer. Increasing the Si thickness and or the temperature resulted in the formation of Gold (Au)-based silicides, which prevent the formation of low interfacial TiN or AlN layers. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2218262
http://hdl.handle.net/11536/11981
ISSN: 0021-8979
DOI: 10.1063/1.2218262
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 100
Issue: 3
結束頁: 
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