標題: Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs
作者: Yang, H. P. D.
Hsu, I. C.
Lai, F. I.
Lin, G.
Hsiao, R. S.
Maleev, N. A.
Blokhin, S. A.
Kuo, H. C.
Wang, S. C.
Chi, J. Y.
光電工程學系
Department of Photonics
公開日期: 1-Aug-2006
摘要: An InGaAs submonolayer ( SML) quantum dot photonic crystal vertical-cavity surface-emitting laser ( QD PhC-VCSEL) for fibre-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate deposition of InAs (< 1 ML) and GaAs. Single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio ( SMSR) larger than 35 dB has been observed over the entire current operating range.
URI: http://dx.doi.org/10.1088/0268-1242/21/8/033
http://hdl.handle.net/11536/11973
ISSN: 0268-1242
DOI: 10.1088/0268-1242/21/8/033
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 21
Issue: 8
起始頁: 1176
結束頁: 1180
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