標題: SONOS-type flash memory using an HfO2 as a charge trapping layer deposited by the sol-gel spin-coating method
作者: You, Hsin-Chiang
Hsu, Tze-Hsiang
Ko, Fu-Hsiang
Huang, Jiang-Wen
Yang, Wen-Luh
Lei, Tan-Fu
材料科學與工程學系奈米科技碩博班
電子工程學系及電子研究所
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: charge retention;endurance;HfO2;sol-gel spin coating;silicon-oxide-nitride-oxide-silicon (SONOS)-like memory
公開日期: 1-八月-2006
摘要: In this letter, the authors fabricate the silicon-oxide-nitride-oxide-silicon(SONOS)-like memory using an HfO2 as charge trapping layer deposited by a very simple sol-gel spin-coating method and 900 degrees C 1-min rapid thermal annealing. They examine the quality of sol-gel HfO2 charge trapping layer by X-ray photoemission spectroscopy, Id-Vg, charge retention, and endurance. The threshold voltage shift is 1.2 V for the sol-gel HVO2 trapping layer. The sol-gel HfO2 film can form a deep trap layer to trap electrons for the SONOS-like memory. Therefore, the sol-gel device exhibits the long charge retention time and good endurance performance. The charge retention time is 10(4) s with only 6% charge loss and long endurance program/erase cycles up to 10(5).
URI: http://dx.doi.org/10.1109/LED.2006.879026
http://hdl.handle.net/11536/11968
ISSN: 0741-3106
DOI: 10.1109/LED.2006.879026
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 27
Issue: 8
起始頁: 653
結束頁: 655
顯示於類別:期刊論文


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  1. 000239440700007.pdf