標題: Hafnium silicate nanocrystal memory using sol-gel-spin-coating method
作者: You, Hsin-Chiang
Hsu, Tze-Hsiang
Ko, Fu-Hsiang
Huang, Jiang-Wen
Lei, Tan-Fu
材料科學與工程學系奈米科技碩博班
電子工程學系及電子研究所
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: charge retention;endurance;hafnium silicate;nanocrystal memory;sol-gel spin coating
公開日期: 1-八月-2006
摘要: The authors fabricate the hafnium silicate nanocrystal memory for the first time using a very simple sol-gel-spincoating method and 900 degrees C 1-min rapid thermal annealing (RTA). From the TEM identification, the nanocrystals are formed as the charge trapping layer after 900 degrees C 1-min RTA and the size is about 5 mn. They demonstrate the composition of nanocrystal is hafnium silicate from the X-ray-photoelectron-spectroscopy analysis. They verify the electric properties in terms of program/erase (P/E) speed, charge retention, and endurance. The sol-gel device exhibits the long charge retention time of 10(4) s with only 6% charge loss, and good endurance performance for P/E cycles up to 10(5).
URI: http://dx.doi.org/10.1109/LED.2006.879022
http://hdl.handle.net/11536/11966
ISSN: 0741-3106
DOI: 10.1109/LED.2006.879022
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 27
Issue: 8
起始頁: 644
結束頁: 646
顯示於類別:期刊論文


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  1. 000239440700004.pdf