標題: Localized electrochemical oxidation of p-GaAs(100) using atomic force microscopy with a carbon nanotube probe
作者: Huang, Wu-Ping
Cheng, Hung-Hsiang
Jian, Sheng-Rui
Chuu, Der-San
Hsieh, Jin-Yuan
Lin, Chih-Ming
Chiang, Mu-Sheng
電子物理學系
Department of Electrophysics
公開日期: 14-Aug-2006
摘要: The nanometre-scale oxidation characteristics of a p-GaAs(100) surface are investigated by atomic force microscope (AFM) electrochemical nanolithography with a multiwalled carbon nanotube (MWCNT) probe. The electrochemical parameters, such as anodizing voltages, scanning rate and modulated voltages, and how they affect the creation and growth of the oxide nanostructures are explored. The present results reveal that the initial growth rate (similar to 600 nm s(-1) for 10 V) decreases rapidly as the electric field strength is decreased. The oxide practically ceases to grow as the electric field is reduced to the order of similar to 1.2 x 10(7) V cm(-1). Also, the oxide growth rate depends not only on the electric field strength but also on the applied anodizing voltage. The present results show that the height of the oxide structures can be significantly improved at an applied anodizing voltage of 10 V by using a CNT probe. In addition, Auger electron spectroscopy (AES) measurements performed in the present work confirm that modified structures replace the form of anodizing p-GaAs(100).
URI: http://dx.doi.org/10.1088/0957-4484/17/15/039
http://hdl.handle.net/11536/11921
ISSN: 0957-4484
DOI: 10.1088/0957-4484/17/15/039
期刊: NANOTECHNOLOGY
Volume: 17
Issue: 15
起始頁: 3838
結束頁: 3843
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