標題: Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates
作者: Chen, Y. Y.
Chien, C. H.
Lou, J. C.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nitric oxide (NO);nitrogen-implanted silicon substrate (NIS);nitrided oxide;transmission electron microscopy;secondary ion mass spectroscopy;implantation;gates oxides
公開日期: 14-八月-2006
摘要: The characteristics of nitric oxide (NO)-annealed nitrided gate oxides grown on nitrogen-implanted silicon substrates (NIS) were studied in this paper. It was found that nitrogen accumulation occurred near the interface after NO-annealing, while NIS-grown nitrided oxide produced a uniform nitrogen distribution in the dielectric bulk. Moreover, it was found that the dielectric reliability is strongly dependent on the dosages used for NIS preparation. NIS with dosages smaller than 10(14) cm(-2) was found not to suppress the oxidation rate and to degrade the dielectric reliability. On the other hand, the samples with a dosage of 10(15) cm(-2) not only exhibited a significantly reduced oxidation rate, making it suitable for growing oxides of multiple thicknesses in sub-3 nm technologies meeting the Systems on Chip requirement, but also improved the dielectric reliability. NO-annealed NIS-grown nitrided oxides depict superior dielectric reliability and this technique appears to be suitable to replace the traditional SiO2 at 0.13 mu m technology node and beyond. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2006.01.017
http://hdl.handle.net/11536/11919
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2006.01.017
期刊: THIN SOLID FILMS
Volume: 513
Issue: 1-2
起始頁: 264
結束頁: 268
顯示於類別:期刊論文


文件中的檔案:

  1. 000238963600043.pdf