標題: Thermal stability of Ti/Pt/Cu Schottky contact on InAlAs layer
作者: Lien, Yi-Chung
Chang, Edward Yi
Chen, Szu-Hung
Chu, Li-Hsin
Chen, Po-Chou
Hsieh, Yen-Chang
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 21-Aug-2006
摘要: Electrical characteristics and thermal stability of the Ti/Pt/Cu Schottky contact on InAlAs were investigated. The Ti/Pt/Cu Schottky contact had comparable electrical properties compared to the conventional Ti/Pt/Au contact after annealing. As judged from the material analysis, the Ti/Pt/Cu on InAlAs after 350 degrees C annealing showed no diffusion sign into the InAlAs. After 400 degrees C annealing, the interfacial mixing of Cu and the underlying layers occurred and resulted in the formation of Cu4Ti. The results show that Ti/Pt/Cu Schottky contact using platinum as the diffusion barrier is very stable up to 350 degrees C annealing and can be used for InAlAs/InGaAs high-electron mobility transistors and monolithic microwave integrated circuits. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2338567
http://hdl.handle.net/11536/11906
ISSN: 0003-6951
DOI: 10.1063/1.2338567
期刊: APPLIED PHYSICS LETTERS
Volume: 89
Issue: 8
結束頁: 
Appears in Collections:Articles


Files in This Item:

  1. 000240035400115.pdf