Title: HfSiON n-MOSFETs using low-work function HfSi chi gate
Authors: Wu, C. H.
Hung, B. F.
Chin, Albert
Wang, S. J.
Yen, F. Y.
Hou, Y. T.
Jin, Y.
Tao, H. J.
Chen, S. C.
Liang, M. S.
Department of Electronics Engineering and Institute of Electronics
Keywords: HfSi;HfSiON;n-MOSFETs
Issue Date: 1-Sep-2006
Abstract: The authors have developed a novel high-temperature stable HfSix gate for high-kappa HfSiON gate dielectric. After a 1000 degrees C RTA, the HfSix/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm(2)/V (.) s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.
URI: http://dx.doi.org/10.1109/LED.2006.880659
ISSN: 0741-3106
DOI: 10.1109/LED.2006.880659
Volume: 27
Issue: 9
Begin Page: 762
End Page: 764
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