標題: HfSiON n-MOSFETs using low-work function HfSi chi gate
作者: Wu, C. H.
Hung, B. F.
Chin, Albert
Wang, S. J.
Yen, F. Y.
Hou, Y. T.
Jin, Y.
Tao, H. J.
Chen, S. C.
Liang, M. S.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: HfSi;HfSiON;n-MOSFETs
公開日期: 1-九月-2006
摘要: The authors have developed a novel high-temperature stable HfSix gate for high-kappa HfSiON gate dielectric. After a 1000 degrees C RTA, the HfSix/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm(2)/V (.) s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.
URI: http://dx.doi.org/10.1109/LED.2006.880659
http://hdl.handle.net/11536/11851
ISSN: 0741-3106
DOI: 10.1109/LED.2006.880659
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 27
Issue: 9
起始頁: 762
結束頁: 764
顯示於類別:期刊論文


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