Title: HfSiON n-MOSFETs using low-work function HfSi chi gate
Authors: Wu, C. H.
Hung, B. F.
Chin, Albert
Wang, S. J.
Yen, F. Y.
Hou, Y. T.
Jin, Y.
Tao, H. J.
Chen, S. C.
Liang, M. S.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: HfSi;HfSiON;n-MOSFETs
Issue Date: 1-Sep-2006
Abstract: The authors have developed a novel high-temperature stable HfSix gate for high-kappa HfSiON gate dielectric. After a 1000 degrees C RTA, the HfSix/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm(2)/V (.) s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.
URI: http://dx.doi.org/10.1109/LED.2006.880659
http://hdl.handle.net/11536/11851
ISSN: 0741-3106
DOI: 10.1109/LED.2006.880659
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 27
Issue: 9
Begin Page: 762
End Page: 764
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