標題: High performance non-alloyed pseudomorphic high electron mobility transistors
作者: Peng, CK
Lan, WH
Tu, SL
Yang, SJ
Chen, SS
Lin, CC
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: strained layer superlattice;non-alloyed contacts;surface morphology
公開日期: 1-七月-1996
摘要: We have studied the InAs/GaAs strained layer superlattice (SLS) structures as non-alloyed contacts applied to pseudomorphic high electron mobility transistors (PHEMTs) grown by the molecular beam epitaxy (MBE) system. Transmission line measurements with four point configurations showed that specific contact resistances between 6.6 x 10(-7) and 2.6 x 10(-6) Omega cm(2) were obtained for the as-grown devices, with a linear correlation coefficient of 0.997. D.c. measurements of the as-grown PHEMT with 1 mu m gate showed a transconductance of 240 ms mm(-1). Microwave measurements on the same device showed a cut-off frequency of 19 GHz and a maximum power gain frequency of 42 GHz. These results are comparable with those of devices with the conventional contact scheme. Meanwhile, since the non-alloying process maintains excellent surface morphology and sharp metal pad edges, AuGeNi type metals can be used in small dimension devices. In contrast, the conventionally alloyed devices showed rough surface morphology and zigzag edges, which may affect device processing and limit the usefulness of AuGeNi metal as the ohmic contact in small dimension devices.
URI: http://dx.doi.org/10.1016/0254-0584(96)80056-3
http://hdl.handle.net/11536/1184
ISSN: 0254-0584
DOI: 10.1016/0254-0584(96)80056-3
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 45
Issue: 1
起始頁: 92
結束頁: 96
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UT95300018.pdf