標題: High-temperature magnetoresistance study of a magnetic tunnel junction
作者: Chen, D. C.
Yao, Y. D.
Chen, C. M.
Hung, James
Chen, Y. S.
Wang, W. H.
Chen, W. C.
Kao, M. J.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Magnetic tunnel junction;Tunneling magnetoresistance;Temperature dependence;Thermal annealing
公開日期: 1-Sep-2006
摘要: The thermal stability and the spin transportation phenomenon at room temperature and 140 degrees C of a series of magnetic tunneling junctions with the structure of bottom electrode/PtMn/Pinned layer/ AlO(x)/CoFe/NiFe/top electrode have been investigated. The MR ratio decreases from 33.5% at room temperature to 29% at 140 degrees C. The MR ratio at room temperature increases roughly 0.8% after thermal treatment at temperatures above 60 degrees C. This is related to the thermal relaxation of the strains existing in the samples. (C) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jmmm.2006.02.062
http://hdl.handle.net/11536/11837
ISSN: 0304-8853
DOI: 10.1016/j.jmmm.2006.02.062
期刊: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume: 304
Issue: 1
起始頁: E297
結束頁: E299
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