標題: Light-output enhancement of GaN-based light-emitting diodes by photoelectrochemical oxidation in H2O
作者: Lai, Fang-I
Chen, Wei-Yo
Kao, Chih-Chiang
Ku, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: gallium nitride (GaN);light-emitting diode (LED);photoelectrochemical (PEC) oxidation;light-output enhancement;H2O
公開日期: 1-九月-2006
摘要: The light output of GaN-based light-emitting diodes (LEDs) was improved by an oxide film being directly grown on the p-GaN surface utilizing photoelectrochemical (PEC) oxidation via H2O. The light outputs of the LEDs were enhanced by approximately 16 and 37% after 30 and 45 min PEC oxidation, respectively, compared to those of a conventional LED at 20 mA, and the PEC oxidized LEDs exhibited almost the same dynamic resistance (R = dV/dI) as conventional LEDs without PEC oxidation. Atomic force microscopy (AFM) data show that the roughness of the interface between oxide film and p-GaN increases with oxidation time. In addition, the oxide film on the top surface of the GaN-based LED caused the antireflection effect and the changes of the surface effective refractive indices consequently increased the critical angle and in caused more light to be emitted from the GaN-based LED.
URI: http://dx.doi.org/10.1143/JJAP.45.6927
http://hdl.handle.net/11536/11826
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.6927
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 9A
起始頁: 6927
結束頁: 6929
顯示於類別:期刊論文


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