標題: Gettering of Ni from Ni-metal induced lateral crystallization polycrystalline silicon films using a gettering substrate
作者: Hou, Chih-Yuan
Lin, Chi-Ching
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: gettering;NILC;thin-film transistors
公開日期: 1-九月-2006
摘要: Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (alpha-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi2 precipitates, thus degrading the device performance. We proposed using a-Si-coated wafers as Ni-gettering substrates. By bonding the gettering substrate and NILC poly-Si film together, the Ni-metal impurity within the NILC poly-Si film was greatly reduced.
URI: http://dx.doi.org/10.1143/JJAP.45.6803
http://hdl.handle.net/11536/11824
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.6803
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 9A
起始頁: 6803
結束頁: 6805
顯示於類別:期刊論文