標題: Dry etching of polysilicon with high selectivity using a chlorine-based plasma in an ECR reactor
作者: Chang, KM
Yeh, TH
Wang, SW
Li, CH
Yang, JY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: chlorine-based plasmas;electron cyclotron resonance;polysilicon etching
公開日期: 1-七月-1996
摘要: Halogen-bearing gases have proved to be useful plasma discharge etchants for the fabrication of sub-micron poly-Si gate structures. In this paper, investigations of chlorine-based plasmas generated by an electron cyclotron resonance (ECR) reactor for poly-Si etching is studied. The influences of added oxygen, microwave power and RF power on etching characteristics are discussed. In addition, the etching mechanisms of the underlying oxide are developed. Finally, the Cl-2/HBr/O-2 mixed system is examined. The combined plasma exhibits the features of high selectivity, high anisotropy and high etching rate.
URI: http://dx.doi.org/10.1016/0254-0584(96)80042-3
http://hdl.handle.net/11536/1182
ISSN: 0254-0584
DOI: 10.1016/0254-0584(96)80042-3
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 45
Issue: 1
起始頁: 22
結束頁: 26
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UT95300004.pdf