|Title:||InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasers|
Liu, S. C.
Su, K. W.
Liao, Y. L.
Huang, S. C.
Chen, Y. F.
Huang, K. F.
Department of Electrophysics
|Abstract:||We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3 mu m laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06 mu m. With an incident pump power of 1.8 W, an average output power of 160 mW with a Q-switched pulse width of 19 ns at a pulse repetition rate of 38 kHz was obtained.|
|Journal:||APPLIED PHYSICS B-LASERS AND OPTICS|
|Appears in Collections:||Articles|
Files in This Item: