Title: InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasers
Authors: Li, A.
Liu, S. C.
Su, K. W.
Liao, Y. L.
Huang, S. C.
Chen, Y. F.
Huang, K. F.
電子物理學系
Department of Electrophysics
Issue Date: 1-Sep-2006
Abstract: We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3 mu m laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06 mu m. With an incident pump power of 1.8 W, an average output power of 160 mW with a Q-switched pulse width of 19 ns at a pulse repetition rate of 38 kHz was obtained.
URI: http://dx.doi.org/10.1007/s00340-006-2247-5
http://hdl.handle.net/11536/11803
ISSN: 0946-2171
DOI: 10.1007/s00340-006-2247-5
Journal: APPLIED PHYSICS B-LASERS AND OPTICS
Volume: 84
Issue: 3
Begin Page: 429
End Page: 431
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