標題: Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods
作者: Ling, Shih-Chun
Chao, Chu-Li
Chen, Jun-Rong
Liu, Po-Chun
Ko, Tsung-Shine
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
Cheng, Shun-Jen
Tsay, Jenq-Dar
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
關鍵字: Metalorganic chemical vapor deposition;Nitrides;Semiconducting gallium compounds;Characterization
公開日期: 1-四月-2010
摘要: The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nanorod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 mu m thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2 x 10(9) cm(-2) by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.10.047
http://hdl.handle.net/11536/11789
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2009.10.047
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 312
Issue: 8
起始頁: 1316
結束頁: 1320
顯示於類別:會議論文


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