標題: High-resolution XANES study of Eu(Ba1-xRx)(2)Cu3O7+delta (R = Eu, Pr)
作者: Chen, J. M.
Liu, R. S.
Lee, J. M.
T Lu, K.
Yang, T. J.
Kramer, M. J.
McCallum, R. W.
電子物理學系
Department of Electrophysics
公開日期: 27-Sep-2006
摘要: We have probed the distribution of hole carriers in Eu(Ba1-xEux)(2) Cu3O7+delta (x = 0 - 0.2) and Eu(Ba1-xPrx)(2)Cu3O7+delta (x = 0 - 0.25) by O K-edge and Cu L-edge x-ray absorption spectra. Upon Eu and Pr substitution at the Ba site in Eu(Ba1-xRx)(2)Cu3O7+delta, the concentration of holes in the CuO2 planes becomes greatly diminished. The depletion rate of hole carriers within the CuO2 planes in Eu(Ba1-xPrx)(2)Cu3O7+delta is greater than that in Eu(Ba1-xEux)(2)Cu3O7+delta. The rate of T-c suppression with Pr doping in Eu(Ba1-xPrx)(2)Cu3O7+delta is accordingly greater than that in Eu(Ba1-xEux)(2)Cu3O7+delta.
URI: http://dx.doi.org/10.1088/1367-2630/8/9/215
http://hdl.handle.net/11536/11755
ISSN: 1367-2630
DOI: 10.1088/1367-2630/8/9/215
期刊: NEW JOURNAL OF PHYSICS
Volume: 8
Issue: 
結束頁: 
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