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dc.contributor.authorCheng, T. Y.en_US
dc.contributor.authorLin, C. W.en_US
dc.contributor.authorChang, L.en_US
dc.contributor.authorHsu, C. H.en_US
dc.contributor.authorLee, J. M.en_US
dc.contributor.authorChen, J. M.en_US
dc.contributor.authorLin, J. -Y.en_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorGou, Y. S.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.date.accessioned2019-04-03T06:45:00Z-
dc.date.available2019-04-03T06:45:00Z-
dc.date.issued2006-10-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.74.134428en_US
dc.identifier.urihttp://hdl.handle.net/11536/11742-
dc.description.abstractSingle-phase La0.7Sn0.3MnO3 (LSnMO) thin films were fabricated on LaAlO3 (LAO) substrates by pulsed laser deposition (PLD). The as-deposited films, though showed insulating characteristics with no sign of insulator-metal transition (IMT) down to very low temperatures, did display a paramagnetic-ferromagnetic transition (PFT) around 180 K. The x-ray absorption spectroscopy (XAS) of the as-deposited LSnMO films shows signature of Mn3+/Mn2+ mixed valence indicating that tetravalent Sn ions may have resulted in electron doping into the e(g) band of Mn. The transmission electron microscopy (TEM) analyses on the as-deposited LSnMO films further confirmed that the films are epitaxial with uniform composition distributions. It is suggestive that the doping level of x=0.3 in La1-xSnxMnO3 can be achieved without disrupting the perovskite structure or any composition inhomogeneity. On the other hand, ex situ annealing in oxygen as well as in argon atmosphere, though both drive the films to display IMT and a marked enhancement in the transition temperature, the preservation of LSnMO phase is somewhat doubtful. In the oxygen-annealing case, the evidence from the XAS measurements on Sn ions though showed the existence of tetravalent characteristics, the Hall measurements indicated that the obtained LSnMO films are p type in nature. Furthermore, the TEM analyses also revealed the emergence of the Sn compounds, which may ultimately drive the obtained films into La-deficient La1-xMnO3 phases.en_US
dc.language.isoen_USen_US
dc.titleMagnetotransport properties, electronic structure, and microstructure of La0.7Sn0.3MnO3 thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.74.134428en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume74en_US
dc.citation.issue13en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000241723200079en_US
dc.citation.woscount3en_US
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