Title: Properties of radio frequency magnetron sputtered silicon dioxide films
Authors: Wu, WF
Chiou, BS
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Jul-1996
Abstract: The rf sputtering method, using Ar/O-2 mixture, was applied to fabricate silicon oxide films. The compressive internal stresses, resulted from thermal expansion mismatch, of films deposited on polycarbonate are larger than those of films deposited on glass substrates. Addition of oxygen to the sputtering ambient reduces both the film deposition rate and grain size. The adhesion of the SiO2 film to the glass substrate are measured with pull-off test and/or scratch test. Films sputtered in the presence of oxygen are more wear-resistant than those without oxygen.
URI: http://dx.doi.org/10.1016/0169-4332(96)00103-1
ISSN: 0169-4332
DOI: 10.1016/0169-4332(96)00103-1
Volume: 99
Issue: 3
Begin Page: 237
End Page: 243
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