標題: Properties of radio frequency magnetron sputtered silicon dioxide films
作者: Wu, WF
Chiou, BS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-1996
摘要: The rf sputtering method, using Ar/O-2 mixture, was applied to fabricate silicon oxide films. The compressive internal stresses, resulted from thermal expansion mismatch, of films deposited on polycarbonate are larger than those of films deposited on glass substrates. Addition of oxygen to the sputtering ambient reduces both the film deposition rate and grain size. The adhesion of the SiO2 film to the glass substrate are measured with pull-off test and/or scratch test. Films sputtered in the presence of oxygen are more wear-resistant than those without oxygen.
URI: http://dx.doi.org/10.1016/0169-4332(96)00103-1
http://hdl.handle.net/11536/1173
ISSN: 0169-4332
DOI: 10.1016/0169-4332(96)00103-1
期刊: APPLIED SURFACE SCIENCE
Volume: 99
Issue: 3
起始頁: 237
結束頁: 243
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UY45000007.pdf