標題: Al Schottky contact on p-GaSe
作者: Huang, Wen-Chang
Su, Shui-Hsiang
Hsu, Yu-Kuei
Wang, Chih-Chia
Chang, Chen-Shiung
光電工程學系
Department of Photonics
關鍵字: GaSe;Schottky contact;barrier height
公開日期: 1-Oct-2006
摘要: A new Schottky diode, Al/p-GaSe, was presented in this study. It shows an effective barrier height of 0.96 eV with an ideality factor of 1.24 over five decades and a reverse leakage current density of 4.12 x 10(-7) A/cm(2) at -2 V after rapid thermal annealing at 400 degrees C for 30 s. The generation-recombination effect of the Schottky diode was decreased as the annealing temperature was increased. The formation of Al1.33Se2 was observed by X-ray diffraction analysis after the diode was annealed at 400 degrees C for 30 s. Owing to the grains' growth, the surface morphology of the 400 degrees C-annealed diode was rougher than that of the unannealed diode, which was observed both by the AFM and the SEM analysis. (c) 2006 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.spmi.2006.07.004
http://hdl.handle.net/11536/11711
ISSN: 0749-6036
DOI: 10.1016/j.spmi.2006.07.004
期刊: SUPERLATTICES AND MICROSTRUCTURES
Volume: 40
Issue: 4-6
起始頁: 644
結束頁: 650
Appears in Collections:Conferences Paper


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