標題: Fabrication and characterization of nanowire transistors with solid-phase crystallized poly-Si channels
作者: Lin, Horng-Chih
Lee, Ming-Hsien
Su, Chun-Jung
Shen, Shih-Wen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: leakage;nanowires (NWs);plasma hydrogenation;poly-Si;short-channel effect;thin-film transistor (TFT)
公開日期: 1-Oct-2006
摘要: The performance of thin-film transistors with a novel poly-Si nanowire channel prepared by solid-phase crystallization is investigated in this paper. As compared with conventional planar devices having self-aligned source/drain, the new devices show an improved ON-current per unit width and better control over the short channel effects. The major conduction mechanism of the OFF-state leakage is identified as the gate-induced drain leakage, and it is closely related to the source/drain implant condition and the unique device structure.
URI: http://dx.doi.org/10.1109/TED.2006.882033
http://hdl.handle.net/11536/11700
ISSN: 0018-9383
DOI: 10.1109/TED.2006.882033
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 53
Issue: 10
起始頁: 2471
結束頁: 2477
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