標題: Influence of LT-GaN nucleation layer on the structural and optical properties of MOVPE-grown a-plane GaN
作者: Chang, Shih-Pang
Yang, Hung-Chih
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: Nucleation layer;MOVPE;V/III ratio;GaN;Nonpolar
公開日期: 1-Apr-2010
摘要: The influence of the LT-GaN nucleation layer on the quality of the GaN template was investigated by the study of the surface morphology of the nucleation layer, and of the crystalline and optical properties of the subsequently grown a-plane GaN template. Both X-ray diffraction and photoluminescence results reveal that better crystalline and optical quality could be obtained using thinner nucleation layer thickness and higher V/III ratio, leading to brighter near band edge luminescence as compared to films grown on lower V/III ratio nucleation layer. Our experiments indicate that reduction in the density of nucleation layer islands can effectively improve the crystalline quality of a-plane GaN template, and the V/III ratio of nucleation layer is a more dominant growth parameter to improve the crystalline and optical quality at the same time. The optimized growth parameters for the nucleation layer in our study are thickness of 10 nm and V/III ratio of 9000. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.11.059
http://hdl.handle.net/11536/11678
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2009.11.059
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 312
Issue: 8
起始頁: 1307
結束頁: 1310
Appears in Collections:Conferences Paper


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