標題: Growth behaviour of Ge nano-islands on the nanosized Si{111} facets bordering on two {100} planes
作者: Ferng, Shyh-Shin
Yang, Tsung-Hsi
Luo, Guangli
Yang, Kai-Ming
Hsieh, Ming-Feng
Lin, Deng-Sung
物理研究所
友訊交大聯合研發中心
Institute of Physics
D Link NCTU Joint Res Ctr
公開日期: 28-Oct-2006
摘要: Si( 100) substrates were used to fabricate various nanosized {111} facets between the ( 100) planes using photolithography and anisotropic wet chemical etching. Following simultaneous Ge chemical vapour deposition on the neighbouring ( 100) and {111} facets, the Ge nano-island formation and distribution was observed on both the ( 100) terraces and the {111} side walls using a dynamical atomic force microscope. The nano-island formation on the nanosized {111} strip facets was found to be strongly suppressed upon reducing the strip width due primarily to the interaction of adatoms on the neighbouring facets. Specifically, the difference in the effective chemical potential of Ge adatoms on the two neighbouring facets leads to the depletion of nano-islands on the {111} strip with width < 500 nm under the growth condition used in this study.
URI: http://dx.doi.org/10.1088/0957-4484/17/20/027
http://hdl.handle.net/11536/11655
ISSN: 0957-4484
DOI: 10.1088/0957-4484/17/20/027
期刊: NANOTECHNOLOGY
Volume: 17
Issue: 20
起始頁: 5207
結束頁: 5211
Appears in Collections:Articles


Files in This Item:

  1. 000241856000027.pdf