標題: Inductorless broadband RF front-end using 2 um GaInP/GaAs HBT technology
作者: Wu, Tzung-Han
Meng, Chinchun
Huang, Guo-Wei
電信工程研究所
Institute of Communications Engineering
關鍵字: GaInP/GaAs HBT;wideband amplifier;micromixer;Gilbert mixer
公開日期: 2007
摘要: A GaInP/GaAs HBT broadband RF front-end consisting of a low noise wideband amplifier and a micromixer is demonstrated in this paper. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 GHz to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth.
URI: http://hdl.handle.net/11536/11612
ISBN: 978-1-4244-0687-6
ISSN: 0149-645X
期刊: 2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6
起始頁: 2128
結束頁: 2131
Appears in Collections:Conferences Paper