標題: Plasma damage-enhanced negative bias temperature instability in low-temperature polycrystalline silicon thin-film transistors
作者: Chen, Chih-Yang
Lee, Jam-Wem
Chen, Wei-g Chen
Lin, Hsiao-Yi
Yeh, Kuan-Lin
Lee, Po-Hao
Wang, Shen-De
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs);negative bias temperature instability (NBTI);plasma damage
公開日期: 1-Nov-2006
摘要: In this letter, a mechanism that will make negative bias temperature instability (NBTI) be accelerated by plasma damage in low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) is presented. The experimental results confirm that the mechanism, traditionally found in the thin gate-oxide devices, does exist also in UPS TFTs. That is, when performing the NBTI measurement, the UPS TFTs with a larger antenna ratio will have a higher degree in degradation of the threshold voltage, effective mobility, and drive current under NBTI stress. By extracting the related device parameters, it was demonstrated that the enhancement is mainly attributed to the plasma-damage-modulated creating of interfacial states, grain boundary trap states, and fixed oxide charges. It could be concluded that plasma damage will speed up the NBTI and should be avoided for the UPS TFT circuitry design.
URI: http://dx.doi.org/10.1109/LED.2006.883564
http://hdl.handle.net/11536/11604
ISSN: 0741-3106
DOI: 10.1109/LED.2006.883564
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 27
Issue: 11
起始頁: 893
結束頁: 895
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