標題: Modeling the well-edge proximity effect in highly scaled MOSFETs
作者: Sheu, Yi-Ming
Su, Ke-Wei
Tian, Shiyang
Yang, Sheng-Jier
Wang, Chih-Chiang
Chen, Ming-Jer
Liu, Sally
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CMOS wells;high-energy ion implantation;ion scattering;MOSFETs;SPICE model;technology computer-aided design (TCAD) simulation
公開日期: 1-Nov-2006
摘要: The well-edge proximity effect caused by ion scattering during implantation in highly scaled CMOS technology is explored from a physics and process perspective. Technology computer-aided design (TCAD) simulations together with silicon wafer experiments have been conducted to investigate the impact of this effect. The ion scattering model and TCAD simulations provided a physical understanding of how the internal changes of the MOSFETs are formed. A new compact model for SPICE is proposed using physics-based understanding and has been calibrated using experimental silicon test sets.
URI: http://dx.doi.org/10.1109/TED.2006.884070
http://hdl.handle.net/11536/11577
ISSN: 0018-9383
DOI: 10.1109/TED.2006.884070
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 53
Issue: 11
起始頁: 2792
結束頁: 2798
Appears in Collections:Articles


Files in This Item:

  1. 000241805300017.pdf