標題: Extended microtunnels in GaN prepared by wet chemical etch
作者: Huang, Hsin-Hsiung
Zeng, Hung-Yu
Lee, Chi-Ling
Lee, Shih-Chang
Lee, Wei-I
電子物理學系
Department of Electrophysics
公開日期: 13-Nov-2006
摘要: It is demonstrated in GaN that microtunnels extended beyond hundreds of microns can be easily achieved using wet chemical etch. To obtain this result, specially designed structures of GaN layers are first grown on sapphire substrates with metal-organic chemical vapor deposition and subsequently with hydride vapor phase epitaxy techniques. The prepared samples are then chemically etched in molten KOH. With the designed structure of GaN layers, extended microtunnels with triangular cross sections are formed. The crystallographic planes of the triangular bevels belong to the {11(2) over bar 2} family. The etch rate of the tunnel can be as high as 10 mu m/min at proper etching conditions. (c) 2006 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2374841
http://hdl.handle.net/11536/11551
ISSN: 0003-6951
DOI: 10.1063/1.2374841
期刊: APPLIED PHYSICS LETTERS
Volume: 89
Issue: 20
結束頁: 
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