標題: Atomistic modeling of dislocation activity in nanoindented GaAs
作者: Jian, Sheng-Rui
Fang, Te-Hua
Chuu, Der-San
Ji, Liang-Wen
電子物理學系
Department of Electrophysics
關鍵字: molecular dynamics simulations;Tersoff potential;GaAs;nanoindentation
公開日期: 15-Nov-2006
摘要: The mechanical behavior of GaAs was investigated by nanoindentation with the aid of molecular dynamics (MD) analysis based on the Tersoff potential. Particular attention was devoted to the evolution characterization of dislocation activity during deformation. The transition from elastic-to-plastic deformation behavior was clearly observed as a sudden displacement excursion occurring during the load-displacement curves of larger loads (single pop-in), faster impact velocity and higher temperature (multiple pop-ins). Even for an ultra-small penetration depth (< 3 nm), the MD simulation shows that GaAs deforms plastically and a good description is given in the results. The plastic deformation occurs due to the anticipated change in the twinning and/or dislocation motion. Dislocation nucleations occurred inside the material near the top of the surface and generated loops in the {111} slip planes. The MD analysis of the deformation behavior shows an agreement with that of previous atomic force microscopy (AFM) and transmission electron microscopy (TEM) experiments. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2006.01.022
http://hdl.handle.net/11536/11542
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2006.01.022
期刊: APPLIED SURFACE SCIENCE
Volume: 253
Issue: 2
起始頁: 833
結束頁: 840
Appears in Collections:Articles