標題: Statistical study on the states in the low-temperature poly-silicon films with thin film transistors
作者: Huang, Shih-Che
Chou, Yen-Pang
Tai, Ya-Hsiang
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: thin film transistor;poly-Si;model;statistical distribution
公開日期: 25-Nov-2006
摘要: Laser recrystallized low temperature poly-silicon films have attracted attention for their applications in thin-film transistors (TFTs), which are widely used in active matrix displays. The electrical characteristics of the poly-silicon film may vary because of its grain boundaries. In this work, the variation is statistically studied with respect to the threshold voltage and mobility of the TFTs. The threshold voltage and mobility of many closely-located TFTs are measured. These two parameters correspond to the deep states and tail states of the poly-silicon film, respectively. The mutual difference of two threshold voltages exhibits the distribution in a Gaussian-Lorentzian cross product form. On the other hand, the mutual difference of two mobility exhibits the distribution of Lorentzian function. This result directly reflects the local fluctuations and the spatial trends of the deep and tail states in a poly-silicon film. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2006.07.125
http://hdl.handle.net/11536/11526
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2006.07.125
期刊: THIN SOLID FILMS
Volume: 515
Issue: 3
起始頁: 1210
結束頁: 1213
Appears in Collections:Conferences Paper


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