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dc.contributor.authorChen, Shih-Chingen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorWu, Y. C.en_US
dc.contributor.authorTsai, C. C.en_US
dc.contributor.authorChang, T. S.en_US
dc.contributor.authorLien, Chen-Hsinen_US
dc.date.accessioned2014-12-08T15:15:21Z-
dc.date.available2014-12-08T15:15:21Z-
dc.date.issued2006-11-25en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2006.07.093en_US
dc.identifier.urihttp://hdl.handle.net/11536/11525-
dc.description.abstractThis work presents a method to enhance the performance of polycrystalline silicon thin film transistors (poly-Si TFTs) by using an oxide-nitride-oxide (ONO) gate dielectric and the multiple nanowire channels structure. Experimental results indicate that the performance of the device was enhanced by using the ONO multilayer, because the ONO gate dielectric constant is increased compared to the conventional oxide gate dielectric. Additionally, the TFTs with a ten nanowire channel structure (NW-TFTs) have superior electrical characteristics compared to other TFTs. This is because a structure with more corners and a shorter radius has better gate control due to the corner effect. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectpoly-Si TFTsen_US
dc.subjectoxide-nitride-oxideen_US
dc.subjectnanowireen_US
dc.titleHigh-performance polycrystalline silicon thin-film transistors with oxidenitride-oxide gate dielectric and multiple nanowire channelsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2006.07.093en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume515en_US
dc.citation.issue3en_US
dc.citation.spage1112en_US
dc.citation.epage1116en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000242639600052-
Appears in Collections:Conferences Paper


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