標題: High-performance polycrystalline silicon thin-film transistors with oxidenitride-oxide gate dielectric and multiple nanowire channels
作者: Chen, Shih-Ching
Chang, Ting-Chang
Liu, Po-Tsun
Wu, Y. C.
Tsai, C. C.
Chang, T. S.
Lien, Chen-Hsin
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: poly-Si TFTs;oxide-nitride-oxide;nanowire
公開日期: 25-Nov-2006
摘要: This work presents a method to enhance the performance of polycrystalline silicon thin film transistors (poly-Si TFTs) by using an oxide-nitride-oxide (ONO) gate dielectric and the multiple nanowire channels structure. Experimental results indicate that the performance of the device was enhanced by using the ONO multilayer, because the ONO gate dielectric constant is increased compared to the conventional oxide gate dielectric. Additionally, the TFTs with a ten nanowire channel structure (NW-TFTs) have superior electrical characteristics compared to other TFTs. This is because a structure with more corners and a shorter radius has better gate control due to the corner effect. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2006.07.093
http://hdl.handle.net/11536/11525
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2006.07.093
期刊: THIN SOLID FILMS
Volume: 515
Issue: 3
起始頁: 1112
結束頁: 1116
Appears in Collections:Conferences Paper


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