標題: Influence of Ta content on the physical properties of SrBi2Ta2O9 ferroelectric thin films
作者: Hsu, Fan-Yi
Leu, Ching-Chich
Chien, Chao-Hsin
Hu, Chen-Ti
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Dec-2006
摘要: We have investigated the effect that the Ta content has on the ferroelectric properties of strontium bismuth tantalate (SBT) thin films synthesized using metalorganic decomposition (MOD) and spin coating techniques. The physical properties of these SBT samples were strongly dependent upon the Ta ratio. Polarization measurements revealed that Ta-deficient SBT exhibited a relatively low coercive field (2E(c) similar to 87 kV/cm) and a high remanent polarization (2P(r) similar to 15 mu C/cm(2)). The value of 2P(r) decreased as the Ta ratio in SBT increased. The improved ferroelectric properties of the Ta-deficient SBT,,samples may have resulted from the uniformly well-grown bismuth-layered-structured (BLS) phases of the films and their highly preferential orientation along the a and b axes. We suggest that the. incorporation of Ta vacancies plays an important role in enhancing the crystallinities and microstructures of Ta-deficient SBT films.
URI: http://dx.doi.org/10.1557/jmr.2006.0383
http://hdl.handle.net/11536/11511
ISSN: 0884-2914
DOI: 10.1557/jmr.2006.0383
期刊: JOURNAL OF MATERIALS RESEARCH
Volume: 21
Issue: 12
起始頁: 3124
結束頁: 3133
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