Title: Electrical properties in arsenic-ion-implanted GaAs
Authors: Chen, WC
Chang, CS
National Chiao Tung University
Department of Photonics
Issue Date: 1-Aug-1996
Abstract: A model of effective surface potential energy is proposed to explain unknown behavior of carrier transport in film and leakage currents in Schottky diodes. X-ray photoelectron spectroscopy is employed to investigate a series of band diagrams of arsenic-ion-implanted GaAs films. It is shown that the effective surface potential energies, affected by the shift of core levels, are due to different microstructures and atomic environments in these films at different annealing temperatures. Moreover, the effective barrier heights on the surfaces of these films are changed by the different effective surface potential energies which increase from 0.49 to 0.75 eV in films annealed from 200 to 600 degrees C, but slightly decrease to 0.7 eV in films annealed up to 800 degrees C. (C) 1996 American Institute of Physics.
URI: http://hdl.handle.net/11536/1148
ISSN: 0021-8979
Volume: 80
Issue: 3
Begin Page: 1600
End Page: 1604
Appears in Collections:Articles