標題: Characteristics of single-mode InGaAs submonolayer quantum-dot photonic-crystal vertical-cavity surface-emitting lasers
作者: Yang, Hung-Pin D.
Hsu, I-Chen
Lai, Fang-I
Lin, Gray
Hsiao, Ru-Shang
Maleev, Nikolai A.
Blokhin, Sergej A.
Kuo, Hao-Chung
Chi, Jim Y.
光電工程學系
Department of Photonics
關鍵字: single-mode;submonolayer;quantum-dot;VCSEL
公開日期: 1-Dec-2006
摘要: An InGaAs submonolayer (SML) quantum-dot photonic-crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. The beam profile and near-field image study of the PhC-VCSEL indicates that the laser beam,is well confined by the photonic crystal structure of the device.
URI: http://dx.doi.org/10.1143/JJAP.45.9078
http://hdl.handle.net/11536/11471
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.9078
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 12
起始頁: 9078
結束頁: 9082
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